Slanted tri-gate Schottky barrier diode on GaN-on-Si
© 2019 EPFL
Our demonstration of slanted tri-gate/tri-anode GaN Schottky barrier diode on silicon was featured on SemiconductorToday magazine - Feb. 2018.
Jun Ma and Elison Matioli of École polytechnique fédérale de Lausanne (EPFL) in Switzerland have used a hybrid tri-anode/slanted tri-gate structure to reduce leakage current and increase breakdown voltages in gallium nitride (GaN) lateral Schottky barrier diodes (SBDs) produced on silicon substrates [Appl. Phys. Lett., vol112, p052101, 2018].
Ma and Matioli comment: “The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD.” They see the devices as having potential for power converters with high performance and competitive cost.
European Research Council under the European Union’s H2020 program/ERC Grant Agreement No. 679425 and Swiss National Science Foundation under Assistant Professor Energy Grant No. PYAPP2_166901
J. Ma; E. Matioli, 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage curren, Appl. Phys. Lett. 112, 052101 (2018) DOI : 10.1063/1.5012866.