Multi-channel power transistors shape up
© E. Matioli / EPFL 2019
Our IEDM 2019 paper has been featured in Nature Electronics: A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
"...Despite much progress, GaN power devices are still far away from their theoretical performance limit, and devices that are capable of both low on-resistance and high voltage reliability have yet to be demonstrated. Reporting at the 2019 IEEE International Electron Devices Meeting in San Francisco, Jun Ma, Elison Matioli and colleagues now show that a four-channel aluminium gallium nitride (AlGaN)/GaN transistor can achieve a breakdown voltage of 1.2 kV together with a low on-resistance of 2.8 Ω mm, a result that improves state of the art performance by over 50% (ref. 1)...".
ERC Starting Grant (project In-NEED)
SNSF AP Energy Grant (project PYAPP2_166901)
SNSF (project 200021_169362)
Ma, J. et al. In Proc. 2019 IEEE Int. Electron Devices Meeting (in the press); https://ieee-iedm.org/program/
Conference reflections. Nat Electron 2, 549 (2019)
Kuball, M. Multi-channel power transistors shape up. Nat Electron 2, 553–554 (2019)