Fabio Bersano presents at International Electron Devices Meeting

The IEDM is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. It is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

Bersano's work is advancing the state of the art in silicon qubits. The study Bersano presented validates the integration of thin cobalt nanomagnets in a FEOL compatible process for EDSR manipulation in Si spin qubits. His team designed, fabricated and electrically characterized three compact spin qubit architectures with Co nanomagnets on Fully Depleted Silicon-on-Insulator. The gate-first integration is investigated using x-ray spectroscopy and diffraction, and high-low frequency capacitive characterization to explore key process integration parameters. Electron holography measurements confirmed the remanent magnetization of horseshoe nanomagnets as most suited for low field operation, in agreement with micromagnetic simulations. These findings demonstrate the feasibility of compact Co FEOL integration in nanowires, FinFETs, and planar spin qubit architectures.

"This is an exceptional achievement in the top level forum of semiconductor technology with all leading industries in quantum," says Ionescu. "It is an amazing accomplishment and we are very proud of him."