Charitat Award for Luca Nela at the ISPSD'21
The paper entitled “High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors” presented by Luca Nela from the School of Engineering's POWERlab has received the Charitat Award at the 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2021), held in Nagoya, Japan. This is the second Charitat Award in a row after the previous one at ISPSD 2020 in Vienna with the paper “High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs” also by Luca Nela, Elison Matioli, and co-authors from the POWERlab.
IThis work proposes novel power devices based on the combination of several conductive channels and nanowire structures to reduce the on-resistance while maintaining a large breakdown voltage. This approach enables power devices with much-improved efficiency that have a great potential to reduce losses in power converters. Promising applications of this technology are electric vehicles, fast chargers, and renewable energies. This work was presented at the EEE ISPSD, which is the premier conference for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies and applications.
Picture: Nanowire structures presenting five parallel channels through which electrons flow. A gate metal around the nanowires provides control over all of the embedded channels.
This work was supported in part by the European Research Council (ERC) under the European Union’s H2020 programme/ERC Grant Agreement 679425, in part by the Swiss National Science Foundation (SNSF) under Assistant Professor (AP) Energy Grants PYAPP2_166901 and 200021_169362 and in part by the ECSEL Joint Undertaking (JU) under Grant Agreement 826392. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and from Austria, Belgium, Germany, Italy, Norway, Slovakia, Spain, Sweden and Switzerland.
High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors
Luca Nela, Catherine Erine, Jun Ma, Halil Kerim Yildirim, Remco van Erp, Peng Xiang, Kai Cheng, Elison Matioli
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 143-146, doi: 10.23919/ISPSD50666.2021.9452238.