Two new papers on “high temperature passivating contacts”
© 2020 Elsevier
PV-lab realized two new paper on passivating contacts. Frank Meyer and his co-author show a new selective layer with low temperature process while Philippe Wyss and co-author show a p-type rear selective contact layer that is compatible that doesn't degrade during high temperature process.
The outstanding work of the PV-lab is available from the epfl repository or directly at the publisher. Check it out!
A new electron selective layer with low temperature process for front side of crystaline silicon solar cell:
The new layer composed of an ultra-thin tin oxyde layer and a hydrogen-rich silicon nitride layer allows improved passivation of the front contact. This technology allow to manufacture cells at 22.8 % efficiency with fill factor over 81.9%, thanks to a boosted implied open-circuit voltage of 728 mV.
F. Meyer, A. Savoy, J. J. Diaz Leon, M. Persoz and X. Niquille. Optimization of front SiNx/ITO stacks for high-efficiency two-side contacted c-Si solar cells with co-annealed front and rear passivating contacts, in Solar Energy Materials and Solar Cells, vol. 219, p. 110815, 2020-09-29.
Detailed record - Full Text - View at publisher
Hole selective contact layer compatible with high temperature process
A p-type selective rear contact layer, carefully tuned to protect the silicon oxyde tunneling layer, allow for annealing at 900°C without suffering any current loss. Using such layer, heterojunction solar cell, with efficiency of 22% have been demonstrated.