Finalist EPFL doctorate Award 2009 - Moselund Kirsten
© 2009 EPFL
Kirsten Emilie Moselund's scientific work is (according to the opinion of the jury) ranking among the best 3 % PhD theses awarded by EPFL in 2008. Thesis EPFL, no 4068 (2008). Dir.: Mihai Adrian Ionescu.
Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform.
The gate-all-around (GAA) architecture is acknowledged as the ultimate transistor architecture in terms of control of short-channel effects. In the present work, a new low-cost top-down local SOI fabrication method is presented, which relies on smart processing of bulk silicon to obtain dimensions beyond that of the lithographic resolution. Using this technology platform, we have addressed three of the issues facing modern nanoelectronics: improved gate control and mobility enhancement by strain engineering is demonstrated in a bended GAA MOSFET; less than 10mV/decade switching transients are shown in an omega-gate punch-through impact ionization MOSFET (PIMOS); and the issue of interconnect is addressed by an assessment of photonic global interconnect, centered around a GAA electrooptical modulator.