A material to revolutionize electronics.
Structure of monolayer MoS2
Single-layer MoS2 transistors.
Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The group of Prof. Andras Kis (LANES - Laboratory of Nanoscale Electronics and Structures) used a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS2 mobility of at least 200 cm2 V−1 s−1, similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 108 and ultralow standby power dissipation. Because monolayer MoS2 has a direct bandgap16, 18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2 could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
B. Radisavljevic et al., Nature Nanotechnology, doi:10.1038/nnano.2010.279 (2011)